High-accuracy oled touch display panel structure of narrow border

ABSTRACT

A high-accuracy OLED touch display panel structure of narrow border includes an upper substrate, a lower substrate, an OLED layer configured between the upper and lower substrates, a sensing electrode layer, a thin film transistor layer, a cathode layer, and an anode layer. The sensing electrode layer has a plurality of first conductor line units. The thin film transistor layer includes a plurality of gate lines, a plurality of source lines, and a plurality of second conductor line units. The plurality of first conductor line units and the plurality of second conductor line units form a sensing touch pattern structure for sensing an approaching external object. The plurality of first conductor line units and the plurality of second conductor line units are disposed corresponding to positions of the plurality of gate lines and the plurality of source lines.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a structure of touch display panel and,more particularly, to a high-accuracy OLED touch display panel structureof narrow border.

2. Description of Related Art

In recent year, the flat panel display industry has been rapidlydeveloped, and many products have also been made in pursuit of lightweight, thinness, small volume and fine image quality for developingseveral types of flat-panel displays to replace traditional cathode raytube display (CRT). FIG. 1 schematically illustrates the types of knowndisplay panels. As shown in FIG. 1, the flat panel display includesliquid crystal display (LCD), plasma display panel (PDP), organic lightemitting diode (OLED) display, field emission display (FED), and vacuumfluorescence display (VFD).

Among these types of flat panel displays, the organic light emittingdiode display (OLED) technology is the one with great potential. OLEDwas first published by Eastman Kodak Co. in 1987. It has the features ofthinness, light weight, self-illumination, low driving voltage, highefficiency, high contrast, high color saturation, fast response,flexibility, etc., and is therefore deemed as positively evaluateddisplay technology following the TFT-LCD. In recent years, due to thedevelopment of mobile communications, digital products and digitaltelevisions, the demand for high-quality full-color flat-panel displaysis rapidly increased. The OLED display is provided with not only theadvantages of LCD display including thinness, power-saving, andfull-color display, but also the features of wide viewing angle,self-illumination, and fast response that are better than LCD.

FIG. 2 schematically illustrates the basic structure of prior OLEDdisplay. The OLED display 200 includes a cathode layer 210, an OLEDlayer 220, an anode layer 230, a thin film transistor layer 240, a lowersubstrate 250, and an upper substrate 260, wherein the OLED layer 220further includes a hole transporting layer (HTL) 221, an emitting layer223, and an electron transporting layer (ETL) 225.

The light-emitting principle of OLED is such that the electrons andelectric holes are injected from the cathode layer 210 and the anodelayer 230 respectively by applying electric field and, after theelectric holes pass through the electric hole transport sub-layer 221and electrons pass through the electron transport sub-layer 225, theelectrons and electric holes enter the light-emitting layer 223 withfluorescent characteristics and then are combined to produce excitedphotons, which immediately release energy and return to the groundstate. The released energy will generate different colors of light basedon different luminescent materials, so as to cause OLED to emit light.

Modern consumer electronic apparatuses are typically equipped with touchpanels for use as their input devices. According to different sensingmanners, the touch panels can be classified into resistive type,capacitive type, acoustic type, optical type and other type.

The principle of touch panels is based on different sensing manners todetect a voltage, current, acoustic wave, or infrared to thereby detectthe coordinates of touch points on a screen where a finger or othermedium touches. For example, a resistive touch panel uses a potentialdifference between the upper and lower electrodes to compute theposition of a pressed point for detecting the location of the touchpoint, and a capacitive touch panel uses a capacitance change generatedin an electrostatic combination of the arranged transparent electrodeswith a human body to generate a current or voltage for detecting touchcoordinates.

With the widespread use of smart phones, the multi-touch technique isgetting more and more important. Currently, the multi-touch isimplemented by projected capacitive touch technique.

The projected capacitive touch technique makes use of two layers ofindium tin oxide (ITO) to form a matrix of sensing units arranged inintersected columns and rows, so as to detect precise touch positions.The projected capacitive touch technique is based on capacitive sensing,wherein it designs plural etched ITO electrodes and adds plural sets oftransparent conductor lines that are on different planes and verticalwith each other to form X-axis and Y-axis driving lines. These conductorlines are all controlled by a controller for being sequentially scannedto detect capacitance changes that are sent to the controller.

FIG. 3 is a schematic diagram of a prior touch panel structure 300. Onthe prior touch panel structure 300, the sensing conductor lines 310,320 are arranged in the second direction (Y-direction) and in the firstdirection (X-direction). When a touch sensing is being performed and thesensing conductor lines 320 have to transmit the sensed signals to thecontrol circuit 331 on a flexible circuit board 330, a great amount ofwires at the side of the panel 340 is required for connection to theflexible circuit board 330. Such a prior design increases the borderwidth of the touch panel and thus is not suitable for the trend ofnarrow border.

Therefore, it is desirable to provide an improved touch panel device tomitigate and/or obviate the afore-mentioned problems.

SUMMARY OF THE INVENTION

The object of the present invention is to provide a high-accuracy OLEDtouch display panel structure of narrow border capable of significantlyincreasing the light penetration rate of touch panel, greatly saving thematerial cost and reducing the manufacturing cost, which is moresuitable for the design of touch panel with narrow border in comparisonwith the prior art.

To achieve the object, there is provided a high-accuracy OLED touchdisplay panel structure of narrow border, which comprises: an uppersubstrate; a lower substrate parallel to the upper substrate; an OLEDlayer configured between the upper substrate and the lower substrate; asensing electrode layer disposed at one side of the lower substratefacing the OLED layer, the sensing electrode layer having M firstconductor line units and N connection lines arranged in a firstdirection for sensing an approaching external object, where M and N areeach a positive integer; a thin film transistor layer disposed at oneside of the sensing electrode layer facing the OLED layer, the thin filmtransistor layer including a plurality of gate lines, a plurality ofsource lines, and N second conductor line units arranged in a seconddirection for driving a corresponding pixel driving circuit according toa display pixel signal and a display driving signal; a cathode layerdisposed at one side of the upper substrate facing the OLED layer; andan anode layer disposed at one side of the thin film transistor layerfacing the OLED layer, the anode layer including a plurality of anodepixel electrodes, each anode pixel electrode being connected to a sourceor drain of a corresponding pixel driving transistor, wherein eachsecond conductor line unit makes use of a corresponding i-th connectionline to be extended to one edge of the panel structure of narrow border,where i is a positive integer and 1≦i≦N, the N second conductor lineunits, the M first conductor line units, and the N connection lines aredisposed corresponding to positions of the plurality of gate lines andsource lines.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates the types of prior display panel;

FIG. 2 schematically illustrates the basic structure of a prior OLED;

FIG. 3 is a schematic diagram of a prior touch panel structure;

FIG. 4 is a cross sectional view of the high-accuracy OLED touch displaypanel structure of narrow border in accordance with the presentinvention;

FIG. 5 schematically illustrates the sensing touch pattern structure ofthe sensing electrode layer and the thin film transistor layer inaccordance with the present invention;

FIG. 6 is a cross sectional view taking along A-A′ line of FIG. 5;

FIG. 7 is schematic diagram of a high-accuracy OLED touch display panelstructure of narrow border according to another embodiment of theinvention;

FIG. 8 is a schematic diagram of a first conductor line unit inaccordance with the present invention;

FIG. 9 schematically illustrates the gate line sub-layer in accordancewith the present invention;

FIG. 10 schematically illustrates the source line sub-layer inaccordance with the present invention;

FIG. 11 schematically illustrates the electrical connection between theplurality of wiring segments arranged in the first direction and theplurality of the wiring segments arranged in the second direction inaccordance with the present invention; and

FIG. 12A and FIG. 12B are two cross sectional views taking along C-C′and D-D′lines of FIG. 11, respectively.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

The present invention relates to a high-accuracy OLED touch displaypanel structure of narrow border. FIG. 4 is a stackup diagram of thehigh-accuracy OLED touch display panel structure of narrow border 400 inaccordance with the present invention. As shown, the high-accuracy OLEDtouch display panel structure of narrow border 400 includes an uppersubstrate 410, a lower substrate 420, an OLED layer 430, a sensingelectrode layer 440, a thin film transistor layer 450, a cathode layer460, an anode layer 470, and an insulation layer 480.

The upper substrate 410 and the lower substrate 420 are parallel to eachother. The OLED layer 430 is disposed between the upper and lowersubstrates 410, 420.

In the present invention, the sensing electrode layer 440 is disposed atone side of the lower substrate 420 that faces the OLED layer 430. Onthe sensing electrode layer 440, there are M first conductor line units40-1, 40-2, . . . , 40-M and N connection lines 41-1, 41-2, . . . , 41-Narranged in a first direction (X-direction) and, on the thin filmtransistor layer 450, there are N second conductor line units 50-1,50-2, . . . , 50-N arranged in a second direction (Y-direction), where Mand N are each a positive integer, so as to form a sensing touch patternstructure as shown in FIG. 5.

FIG. 5 schematically illustrates the thin film transistor layer 450 andthe sensing electrode layer 440 in accordance with the presentinvention. As shown in FIG. 5, the sensing electrode layer 440 isdisposed at one side of the lower substrate 420 that faces the OLEDlayer 430. The sensing electrode layer 440 includes M first conductorline units 40-1, 40-2, . . . , 40-M and N connection lines 41-1, 41-2, .. . , 41-N arranged in a first direction (X-direction), where M and Nare each a positive integer.

The thin film transistor layer 450 is disposed at one side of thesensing electrode layer 440 that faces the OLED layer 430. The thin filmtransistor layer 450 includes a plurality of gate lines (not shown), aplurality of source lines (not shown), and N second conductor line units50-1, 50-2, . . . , 50-N arranged in a second direction (Y-direction).With reference with FIG. 4, the thin film transistor layer 450 furtherincludes pixel driving circuits. Each pixel driving circuit drives acorresponding pixel driving transistor according to a display pixelsignal and a display driving signal. The M first conductor line units40-1, 40-2, . . . , 40-M and the N second conductor line units 50-1,50-2, . . . , 50-N are configured for sensing an approaching externalobject according to a touch driving signal.

Each of the N second conductor line units 50-1, 50-2, . . . , 50-N makesuse of a corresponding i-th connection line of the N connection lines41-1, 41-2, . . . , 41-N to be extended to one edge 401 of the panelstructure of narrow border 400, where i is a positive integer and 1≦i≦N.Each of the M first conductor line units 40-1, 40-2, . . . , 40-M isextended to the same edge 401 of the panel structure of narrow border400 through a corresponding metal wire for being further connected to aflexible circuit board 600.

The N second conductor line units 50-1, 50-2, . . . , 50-N, the M firstconductor line units 40-1, 40-2, . . . , 40-M, and the N connectionlines 41-1, 41-2, . . . , 41-N are disposed at positions correspondingto the positions of the plurality of gate lines and the plurality ofsource lines.

As shown in FIG. 5, each of the M first conductor line units 40-1, 40-2,. . . , 40-M is composed of plural metal sensing lines, and each of theN second conductor line units 50-1, 50-2, . . . , 50-N is composed ofplural metal sensing lines. For example, the first conductor line unit40-M is composed of three metal sensing lines 401-M, 402-M and 403-Marranged in the first direction (X-direction). The three metal sensinglines 401-M, 402-M and 403-M are connected by metal sensing lines 404-Mand 405-M at two ends, respectively. The second conductor line unit 50-Nis composed of three metal sensing lines 501-N, 502-N and 503-N arrangedin the second direction (Y-direction). The three metal sensing lines501-N, 502-N and 503-N are connected by metal sensing lines 504-N and505-N at two ends, respectively. In FIG. 5, the three metal sensinglines 501-N, 502-N and 503-N of the second conductor line unit 50-N arecomposed of plural line segments in implementation and will be explainedin more detail in FIG. 11.

The M first conductor line units 40-1, 40-2, . . . , 40-M and the Nsecond conductor line units 50-1, 50-2, . . . , 50-N are not electricconnected with each other. Preferably, an insulation layer 480 may bearranged between the sensing electrode layer 440 and the thin filmtransistor layer 450. Alternatively, it is also applicable to arrangeinsulation traces or insulation blocks in-between the intersections ofthe M first conductor line units 40-1, 40-2, . . . , 40-M and the Nsecond conductor line units 50-1, 50-2, . . . , 50-N.

The plural metal sensing lines of each of the M first conductor lineunits 40-1, 40-2, . . . , 40-M form a quadrilateral region, and theplural metal sensing lines of each of the N second conductor line units50-1, 50-2, . . . , 50-N also form a quadrilateral region. The metalsensing lines in each quadrilateral region are electrically connectedtogether, while any two of the quadrilateral regions are not connectedwith each other. The quadrilateral region has a shape of rectangle orsquare. The first direction is perpendicular to the second direction.Each of the N connection lines 41-1, 41-2, . . . , 41-N is disposedbetween two first conductor line units (40-1, 40-2, . . . , 40-M).

The metal sensing lines in each quadrilateral region formed by theplural metal sensing lines of each of the M first conductor line units40-1, 40-2, . . . , 40-M and the N second conductor line units 50-1,50-2, . . . , 50-N are made of conductive metal material or alloymaterial. The conductive metal material is selectively to be chromium,barium, aluminum, silver, copper, titanium, nickel, tantalum, cobalt,tungsten, magnesium, calcium, potassium, lithium, indium, or a mixtureof LiF, MgF2 or Li2O.

As shown in FIG. 5, each of the N second conductor line units 50-1,50-2, . . . , 50-N is electrically connected with a correspondingconnection line (41-1, 41-2, . . . , 41-N) at a position denoted by adotted ellipse, and each of the N connection lines 41-1, 41-2, . . . ,41-N is extended to the same edge 401 of the high-accuracy OLED touchdisplay panel structure of narrow border 400 through a correspondingmetal wire for being further connected to the flexible circuit board600. Each of the M first conductor line units 40-1, 40-2, . . . , 40-Mis extended to the same edge 401 of the high-accuracy OLED touch displaypanel structure of narrow border 400 through a corresponding metal wirefor being further connected to the flexible circuit board 600.

The surface of the high-accuracy OLED touch display panel structure ofnarrow border 400 is provided to receive at least one touch point. Thereis further provided with a control circuit 610 which is electricallyconnected to the M first conductor line units 40-1, 40-2, . . . , 40-Mand the N second conductor line units 50-1, 50-2, . . . , 50-N via theflexible circuit board 600. The M first conductor line units 40-1, 40-2,. . . , 40-M and the N second conductor line units 50-1, 50-2, . . . ,50-N correspondingly generate a sensing signal in response to theposition and magnitude of a finger's touch on at least one touch pointof the high-accuracy OLED touch display panel structure of narrow border400. The control circuit 610 is electrically connected to the M firstconductor line units 40-1, 40-2, . . . , 40-M and the N second conductorline units 50-1, 50-2, . . . , 50-N via the flexible circuit board 600,so as to calculate the coordinate of the at least one touch point basedon the sensing signal.

FIG. 6 is a cross sectional view taking along A-A′ line of FIG. 5. Asshown in FIG. 6, the second conductor line unit 50-N is connected withthe connection line 41-N at the position denoted by the dotted ellipse Bof FIG. 5. With reference to FIGS. 4 and 6, the insulation layer 480 isarranged between the sensing electrode layer 440 and the thin filmtransistor layer 450, and the second conductor line unit 50-N iselectrically connected to the connection line 41-N through a via 52 thatpasses through the insulation layer 480. That is, with the connectionline 41-N, the second conductor line unit 50-N is able to transmit thesensed signal to the control circuit 610.

FIG. 7 is a schematic diagram of a high-accuracy OLED touch displaypanel structure of narrow border 400 according to another embodiment ofthe invention, which is similar to FIG. 5 except that the N connectionlines 41-1, 41-2, . . . , 41-N have different lengths. As shown, thelengths of the N connection lines 41-1, 41-2, . . . , 41-N are graduallydecreased in this embodiment.

FIG. 8 is a schematic diagram of a first conductor line unit (40-1,40-2, . . . , 40-M). As shown, the quadrilateral region is a rectanglecomposed of three metal sensing lines L2 in the first direction and twometal sensing lines L1 in a second direction. In other embodiments, thenumber of metal sensing lines can be varied according to the actualrequirement.

In the present invention, the N second conductor line units 50-1, 50-2,. . . , 50-N are disposed in the thin film transistor layer 450. Thethin film transistor layer 450 includes a gate line sub-layer and asource line sub-layer. FIG. 9 schematically illustrates the gate linesub-layer 700 in accordance with the present invention. The gate linesub-layer 700 has a plurality of gate lines 710 and a plurality ofwiring segments 720. The plurality of gate lines 710 are arranged in thefirst direction (X-direction) and the plurality of wiring segments 720are arranged in the second direction (Y-direction), wherein theplurality of wiring segments 720 arranged in the second direction areseparated by the plurality of gate lines 710. More specifically, asshown in FIG. 9, the plurality of wiring segments 720 are deemed as aplurality of wiring segment lines arranged in the second direction, eachwiring segment line having several wiring segments 720 aligned in thesecond direction while two aligned adjacent wiring segments 720 areseparated by a corresponding gate line 710. Each of the plurality ofwiring segments 720 arranged in the second direction includes two endsrespectively having a first extension part 721 and a second extensionpart 723 arranged in the first direction and extended toward two sidesof the wiring segment 720, in which the first direction is substantiallyvertical with the second direction. It is noted that FIG. 9 only showsthe possible positions where the plurality of wiring segments 720arranged in the second direction can be disposed. In actual arrangementof wirings, it is possible that only part of the positions, but not allpositions, is disposed with the wiring segments 720, and thus theplurality of wiring segments 720 in FIG. 9 are shown by dotted lines.

FIG. 10 schematically illustrates the source line sub-layer 800 inaccordance with the present invention. The source line sub-layer 800 isdisposed at one side of the gate line sub-layer 700 facing the OLEDlayer 430 and has a plurality of source lines 810 and a plurality ofwiring segments 820. The plurality of source lines 810 are arranged inthe second direction (Y-direction) and the plurality of wiring segments820 are arranged in the first direction (X-direction), wherein theplurality of wiring segments 820 arranged in the first direction areseparated by the plurality of source lines 810. More specifically, asshown in FIG. 10, the plurality of wiring segments 820 are deemed as aplurality of wiring segment lines arranged in the first direction, eachwiring segment line having several wiring segments 820 aligned in thefirst direction while two aligned adjacent wiring segments 820 areseparated by a corresponding source line 810. Each of the plurality ofwiring segments 820 arranged in the first direction includes two endsrespectively having a first extension part 821 and a second extensionpart 823 arranged in the second direction (Y-direction) and extendedtoward two sides of the wiring segment 820.

As shown in FIG. 9 and FIG. 10, the line width of the wiring segment 820arranged in the first direction is equal to the line width of the gateline 710, and the line width of the wiring segment 720 arranged in thesecond direction is equal to the line width of the source line 810. Inother embodiments, the line width of the wiring segment 820 arranged inthe first direction can be smaller than the line width of the gate line710, and the line width of the plurality of wiring segment 720 arrangedin the second direction can be smaller than the line width of the sourceline 810.

In the present invention, the plurality of wiring segments 720 arrangedin the second direction are disposed at positions same as the positionsof the source lines 810 but on different layers. Similarly, theplurality of wiring segments 820 arranged in the first direction aredisposed at positions same as the positions of the gate lines 710 but ondifferent layers. In the present invention, the plurality of wiringsegments 820 arranged in the first direction and the plurality of wiringsegments 720 arranged in the second direction are disposed at positionscorresponding to the positions of the plurality of gate lines 710 andthe plurality of source lines 810.

FIG. 11 schematically illustrates the electrical connection between theplurality of wiring segments 820 arranged in the first direction and theplurality of the wiring segments 720 arranged in the second direction inaccordance with the present invention, wherein the extension parts 721,723, 821, 823 are partially overlapped and electrically connectedthereby, so as to allow the plurality of wiring segments 820 arranged inthe first direction and the plurality of wiring segments 720 arranged inthe second direction to form the N second conductor line units 50-1,50-2, . . . , 50-N of the thin film transistor layer 450. As shown inFIG. 11, there is formed with three metal sensing lines 501-N, 502-N and503-N arranged in the second direction and a metal sensing lines 504-Narranged in the first direction.

From the aforementioned description, it is known that the plurality ofthe wiring segments 720 arranged in the second direction and theplurality of wiring segments 820 arranged in the first direction canrespectively form a second conductor line unit (50-1, 50-2, . . . ,50-N). That is, the extension parts 721, 723, 821, 823 are partiallyoverlapped and electrically connected thereby, and a set of metalsensing lines (501-N, 502-N, 503-N, 504-N, 505-N) can be formed by theplurality of wiring segments 720 arranged in the second direction andthe plurality of wiring segments 820 arranged in the first direction, inwhich the N second conductor line units 50-1, 50-2, . . . , 50-N can beformed by the set of metal sensing lines (501-N, 502-N, 503-N, 504-N,505-N). As shown in FIG. 6, the N second conductor line units 50-1,50-2, . . . , 50-N are electrically connected to the connection lines41-1, 41-2, . . . , 41-N through the vias 52 that pass through theinsulation layer 480 so as to form the sensing conductive lines in thesecond direction.

FIG. 12A and FIG. 12B are two cross sectional views taking along C-C′and D-D′ lines of FIG. 11, respectively. As shown in FIG. 12A, there isan insulation layer 1010 arranged between the first extension part 721and the source lines 810. The first extension part 721 arranged in thefirst direction is electrically connected to the first extension part821 arranged in the second direction and the second extension part 823arranged in the second direction through vias 910. As shown in FIG. 12B,there is an insulation layer 1010 arranged between the gate line 710 andthe source line 810. Because of the insulation layer 1010 arrangedbetween the source line 810 and the first extension part 821 and thesecond extension part 823 arranged in the second direction, the sourceline 810 is not electrically connected to the first extension part 821and second extension part 823.

The OLED layer 430 includes an electrical hole transporting layer 431,an emitting layer 433, and an electron transporting layer 435.

The thin film transistor layer 450 includes a plurality of pixel drivingcircuits 451. Each pixel driving circuit 451 corresponds to a pixel.Based on a display pixel signal and a display driving signal, acorresponding pixel driving circuit 451 is driven so as to proceed withdisplay operation.

According to different designs of the pixel driving circuit 451, such as2T1C being a pixel driving circuit formed with two thin film transistorsand a storage capacitor, and 6T2C being a pixel driving circuit formedwith six thin film transistors and two storage capacitors, the gate 4511of at least one thin film transistor in the pixel driving circuit 451 isconnected to a gate line (not shown). According to different designs ofdriving circuit, a source/drain of at least one thin film transistor ina control circuit is connected to a source line (not shown) and asource/drain of at least one thin film transistor in pixel drivingcircuit 451 is connected to a corresponding anode pixel electrode 471 ofthe anode layer 470.

The anode layer 470 is disposed at one side of the thin film transistorlayer 450 facing the OLED layer 430. The anode layer 470 includes aplurality of anode pixel electrodes 471. Each of the anode pixelelectrodes 471 is corresponding to one pixel driving transistor of thepixel driving circuit 451 of the thin film transistor 450. That is, eachof the anode pixel electrodes 471 is connected to a source/drain of thepixel driving transistor of the corresponding pixel driving circuit 451,so as to form a pixel electrode of a specific color, for example a redpixel electrode, a green pixel electrode, or a blue pixel electrode.

The cathode layer 460 is disposed at one side of the upper substrate 410facing the OLED layer 430 and between the upper substrate 410 and theOLED layer 430. The cathode layer 460 is formed with metal material,preferably metal material with thickness being less than 50 nm. Themetal material is selectively to be alloy of aluminum, silver,magnesium, calcium, potassium, lithium, indium, or combination oflithium fluoride, magnesium fluoride, lithium oxide and aluminum. Due tothe thickness of the cathode layer 460 being less than 50 nm, the lightgenerated by the OLED layer 430 can pass through it, so as to showimages on the upper substrate 410. The cathode layer 460 is intact pieceelectrical connection, so that it can be used as a shielding. Moreover,the cathode layer 460 also receives the current coming from the anodepixel electrode 471.

The line width of metal sensing lines L1 and the metal sensing lines L2is equal to or smaller than the line width of the gate line 710 or theline width of the source line 810. The M first conductor line units40-1, 40-2, . . . , 40-M, the N connection lines 41-1, 41-2, . . . ,41-N, and the N second conductor line units 50-1, 50-2, . . . , 50-N aredisposed at positions corresponding to the positions of the plurality ofgate lines and the plurality of source lines.

In the prior art, the electrode pads made of ITO have an average lightpenetration rate of about 90%. In the present invention, the M firstconductor line units 40-1, 40-2, . . . , 40-M, the N connection lines41-1, 41-2, . . . , 41-N, and the N second conductor line units 50-1,50-2, . . . , 50-N are disposed corresponding to the positions of theplurality of gate lines and the plurality of source lines, so that thelight penetration rate is not influenced. Therefore, the lightpenetration rate of the present invention is much better than that ofthe prior art. Accordingly, in comparison with the prior touch displaypanel, the high-accuracy OLED touch display panel structure of narrowborder 400 in accordance with the present invention shall have a higherbrightness.

In view of the foregoing, it is known that the prior design as in FIG. 3shall increase the border width of the touch panel and thus is notsuitable for the trend of narrow border. When the touch panel structureof narrow border in accordance with the present invention is embeddedinto an OLED display panel, the border of the OLED touch display panelbecomes narrower,

Furthermore, when ITO material is used as a bridge for connecting twoITO electrode points, it is likely to have broken points or defectiveelectrical signals at the bridges due to that the expandability of ITOmaterial is not as good as that of metal. On the other hand, if metal isused as a bridge for connecting two ITO electrode points, it is likelyto have defective electrical signals at the bridges due to that metaland ITO are heterogeneous materials, resulting in negatively affectingthe accuracy of touch detection.

However, in the present invention, the M first conductor line units40-1, 40-2, . . . , 40-M, the N second conductor line units 50-1, 50-2,. . . , 50-N and the N connection lines 41-1, 41-2, . . . , 41-N are allmade of metal, which has a better conductivity in comparison with theprior art, so as to easily transmit the sensed signals of the connectionlines to the control circuit 610, thereby allowing the control circuit610 to accurately compute the touch coordinates. Accordingly, it isknown that the present invention has a better light penetration rate incomparison with the prior art and can lower the manufacturing cost byavoiding the use of expensive ITO material, which is suitable for thetouch display panel of narrow border.

Although the present invention has been explained in relation to itspreferred embodiment, it is to be understood that many other possiblemodifications and variations can be made without departing from thespirit and scope of the invention as hereinafter claimed.

What is claimed is:
 1. A high-accuracy OLED touch display panelstructure of narrow border, comprising: an upper substrate; a lowersubstrate parallel to the upper substrate; an OLED layer configuredbetween the upper substrate and the lower substrate; a sensing electrodelayer disposed at one side of the lower substrate facing the OLED layer,the sensing electrode layer having M first conductor line units and Nconnection lines arranged in a first direction for sensing anapproaching external object, where M and N are each a positive integer;a thin film transistor layer disposed at one side of the sensingelectrode layer facing the OLED layer, the thin film transistor layerincluding a plurality of gate lines, a plurality of source lines, and Nsecond conductor line units arranged in a second direction for driving acorresponding pixel driving circuit according to a display pixel signaland a display driving signal; a cathode layer disposed at one side ofthe upper substrate facing the OLED layer; and an anode layer disposedat one side of the thin film transistor layer facing the OLED layer, theanode layer including a plurality of anode pixel electrodes, each anodepixel electrode being connected to a source or drain of a correspondingpixel driving transistor, wherein each second conductor line unit makesuse of a corresponding i-th connection line to be extended to one edgeof the panel structure of narrow border, where i is a positive integerand 1≦i≦N, the N second conductor line units, the M first conductor lineunits, and the N connection lines are disposed corresponding topositions of the plurality of gate lines and source lines.
 2. Thehigh-accuracy OLED touch display panel structure of narrow border asclaimed in claim 1, wherein each conductor line units is extended to thesame edge of the panel structure of narrow border through acorresponding metal wire for being further connected to a flexiblecircuit board.
 3. The high-accuracy OLED touch display panel structureof narrow border as claimed in claim 2, wherein the N connection linesare made of conductive metal material
 4. The high-accuracy OLED touchdisplay panel structure of narrow border as claimed in claim 3, whereineach of the M first conductor line units is composed of plural metalsensing lines, and each of the N second conductor line units is composedof plural metal sensing lines.
 5. The high-accuracy OLED touch displaypanel structure of narrow border as claimed in claim 4, wherein theplural metal sensing lines of each of the M first conductor line unitsform a quadrilateral region, and the plural metal sensing lines of eachof the N second conductor line units form a quadrilateral region, suchthat the metal sensing lines in each quadrilateral region areelectrically connected together.
 6. The high-accuracy OLED touch displaypanel structure of narrow border as claimed in claim 5, wherein thefirst direction is vertical with the second direction.
 7. Thehigh-accuracy OLED touch display panel structure of narrow border asclaimed in claim 6, wherein each of the N connection lines is disposedbetween two first conductor line units.
 8. The high-accuracy OLED touchdisplay panel structure of narrow border as claimed in claim 7, whereinthe quadrilateral region has a shape of rectangle.
 9. The high-accuracyOLED touch display panel structure of narrow border as claimed in claim8, wherein the metal sensing lines in each quadrilateral region formedby the plural metal sensing lines of each of the M first conductor lineunits and the N second conductor line units are made of conductive metalmaterial or alloy material.
 10. The high-accuracy OLED touch displaypanel structure of narrow border as claimed in claim 9, wherein theconductive metal material is selectively to be chromium, barium,aluminum, silver, copper, titanium, nickel, tantalum, cobalt, tungsten,magnesium, calcium, potassium, lithium, indium, or a mixture of LiF,MgF2 or Li2O.
 11. The high-accuracy OLED touch display panel structureof narrow border as claimed in claim 1, wherein the thin film transistorlayer includes: a gate line sub-layer having a plurality of gate linesand a plurality of wiring segments, the plurality of gate lines beingarranged in the first direction and the plurality of wiring segmentsbeing arranged in the second direction, the plurality of wiring segmentsarranged in the second direction being separated by the plurality ofgate lines; and a source line sub-layer disposed at one side of the gateline sub-layer facing the OLED layer and having a plurality of sourcelines and a plurality of wiring segments, the plurality of source linesare arranged in the second direction and the plurality of wiringsegments are arranged in the first direction, the plurality of wiringsegments arranged in the first direction being separated by theplurality of source lines.
 12. The high-accuracy OLED touch displaypanel structure of narrow border as claimed in claim 11, wherein theplurality of wiring segments arranged in the second direction and theplurality of wiring segments arranged in the first direction aredisposed corresponding to positions of the plurality of gate lines andthe plurality of source lines.
 13. The high-accuracy OLED touch displaypanel structure of narrow border as claimed in claim 12, wherein each ofthe plurality of wiring segments arranged in the second direction hastwo ends respectively having a first extension part and a secondextension part arranged in the first direction, and each of theplurality of wiring segments arranged in the first direction has twoends respectively having a first extension part and a second extensionpart arranged in the second direction, where the extension partsarranged in the first direction are partially overlapped with theextension parts arranged in the second direction.
 14. The high-accuracyOLED touch display panel structure of narrow border as claimed in claim13, wherein the extension parts are partially overlapped and thuselectrically connected thereby, so as to allow the plurality of wiringsegments arranged in the second direction and the plurality of wiringsegments arranged in the first direction to form the N second conductorline units of the thin film transistor layer.
 15. The high-accuracy OLEDtouch display panel structure of narrow border as claimed in claim 1,wherein the OLED layer includes a hole transporting layer, an emittinglayer, and an electron transporting layer.